ATE:
Automatic Test Equipment.
Balanced Contact Force:
Measured as a « ±% » BCF is the allowable deviation from the floating average contact force.
Beam length:
The distance, measure horizontally, from the center of the probe tip to the point the probe enters the epoxy.
Blade card:
Probe card that uses ceramic or metallic blades.
Bond Pad:
The metalized locations on an integrated circuit where the test probes will make contact.
Bond Pad Pitch:
The distance between adjacent bond pad centers.
Bond Pad Size:
The measurement of that portion of the bond pad metalization that’s usable for probing.
Burst Current:
A current pulse of less than 10ms duration.
Contact Force:
The force presented by a probe at overdrive on a bond pad or bump, measured in grams/mil of overdrive (OD).
Contact Resistance:
The resistance that occurs at the junction between the probe tip and the device contact surface metalization.
Dielectric Constant:
A measure of the ability of the material to resist the formation of an electric field within it.
Die:
A single square or rectangular piece of semiconductor material onto which a specific electrical circuit has been fabricated also called a ship or Dut.
Edge Sensor:
An edge sensor (E/S) is a two–wire or three-wire probe configuration that forms a switch to detect contact with the wafer.
Fab-lite:
Any semiconductor company that out sources less than 75% of it’s wafer manufacturing and is a silicon provider.
Fabless:
Any semiconductor company that out sources 75% or greater of its wafer manufacturing and sells silicon to an end-customer.
Fanout Angle:
The angle made by a probe with respect to the side of the die, measured from the perpendicular to the die side.
Floating Average:
A range of acceptable average values. Applies specifically to contact force.
FR4:
A PCB material.
FWLT:
Full Wafer Level Test.
Glassivation:
Passivation using silicon dioxide as the coating.
IDM:
Any integrated device manufacturer that produces 75% of their silicon internally.
Leakage Current:
Parasitic loss of current in an electrical circuit.
Mask:
A patterned screen, usually of glass, used to allow exposure of selected areas of photoresist-coated wafer by a light source.
Measure THD:
Total Harmonic Distortion.
Micron:
A metric unit linear measure that equals on millionth of a meter. Same as micrometer (mm); equal to 25,4 µm.
Mil:
One Thousandth of an Inch. Equal to 25,4 microns.
MotherBoard:
Tool measure probe card.
Needle:
Probe.
OHM (Ω):
Unit of measurement used for resistance.
Overdrive:
Z axis (vertical) distance measurement calculated from the first contact point of the probe to the device surface.
Passivation:
A protective coating placed on a wafer surface. Sometimes called glassivation.
PCB:
Printed Circuit Board.
PCB Aperture:
A hole opened in the center of the pcb to support attachment ring.
Planarization:
The ideal probing operation would result in simultaneous contact of all test pads on each and every device across the substrate.
Polyimide:
A PCB material that used for probe cards designed for probing temperatures greater than 100°C.
Probe Angle:
The angle of the probe shank where it passes through the epoxy relative to the horizontal plane of the PCB.
Probe Card Analyzer:
A piece of test equipment used to measure critical probe card parameters.
Probe Shank:
The portion of the probe that isn’t tapered.
Probe Solder Point:
The location on the PCB where the probe tail is connected.
Probe Stability:
The ability of a probe to retain its performance characteristics over time.
Probe Tail:
The portion of a probe outside the ring.
Probe Tip Alignment:
Probe tip placement at overdrive with respect to the targets on a coordinates glass mask or bond pads on a wafer.
Probe Tip Depth:
The distance from the reference plane of a probe card to the plane formed by the probe tips. This is typically measured from the bottom of the pcb to the probe.
Probe Tip Length:
The Vertical distance from the tip of the probe to the bend in the probe.
Probe Tip Shape:
The contour of the probe tip; typically flat or radiused.
Probe Tip Diameter:
The diameter of the wire material from which the finished probe is made.
Probing:
A term used to describe the electrical testing that employs very finely tipped probes applied sequentially to a wafer.
Raidissor:
Mechanical part above the spider.
Ring:
A ceramic or metallic piece machined to proper dimensions to support probes on a PCB.
Ring Aperture:
The opening (hole) in the center of the ring.
Scrub Mark:
Mark on the contact surface created by scrubbing action as the probe tip moves across the device metalization when over drive is applied.
SNR:
Signal to Noise Ratio.
Spider:
Assemby ring with needles.
Stiffener:
Mechanical part above the PCB.
Target:
A shape on a glass mask that represents the final position of the probe tip.
Tip length:
Probe tip length is measured from the tip of the probe to the bend in the probe.
Touchdown:
The point of initial contact between probe and bond pad. The number of times the probe card is overdriven onto a wafer during the lifetime of the probe card.
Wafer:
A thin disk of semiconducting material on which many separate circuits can be fabricated and then cut into individual ICs.
WLBI:
Wafer Level Burn In.
WLCSP:
Wafer Level Chip Size Package.
WLT:
Wafer Level Test.
Yield:
The number of acceptable units produced compared to the maximum number.

International System of Units

The 20 SI prefixes used to from decimal multiples and sub-multiples of SI units are shown here:

Tableau SI